to ? 92l 1. emitter 2. collector 3. base to-92l plastic-encapsulate transistors 2SB647 transistor (pnp) features z low frequency power amplifier z complementary pair with 2sd667 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10a,i e =0 -120 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e =-10a,i c =0 -5 v collector cut-off current i cbo v cb =-100v,i e =0 -10 a h fe(1) * v ce =-5v, i c =-150ma 60 320 dc current gain h fe(2) * v ce =-5v, i c =-500ma 30 collector-emitter saturation voltage v ce(sat) * i c =-500ma,i b =-50ma -1 v base-emitter voltage v be * v ce =-5v, i c =-150ma -1.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 20 pf transition frequency f t v ce =-5v,i c =-150ma 140 mhz *pulse test classification of h fe(1) rank b c d range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage -120 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current -1 a p c collector power dissipation 750 mw r ja thermal resistance from junction to ambient 167 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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